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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1335 DESCRIPTION With TO-220Fa package Complement to type 2SD1855 Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER HAN INC Collector -emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector-base voltage SEM GE Open base TC=25ae CONDITIONS Open emitter OND IC TOR UC VALUE -80 -60 -6 -4 30 150 -55~150 ae ae UNIT V V V A W Open collector Collector power dissipation Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA; IB=0 IC=-50|I IE=-50|I A; IE=0 A; IC=0 MIN -60 -80 -6 2SB1335 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V V IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A; VCE=-5V 60 12 -1.0 -1.5 -10 -10 320 |I |I V V A A Transition frequency E F Collector output capacitance hFE Classifications D 60-120 HAN INC 100-200 160-320 SEM GE f=1MHz ; VCB=-10V OND IC TOR UC 100 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1335 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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